Chelyadinskii, A. R.: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

1

Efficiency of formation of radiation defects in silicon upon implantation of silicon and phosphorus ions

M. Jadan, A.R. Chelyadinskii, V.Yu. Yavid

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2004

Language:

english

File:

PDF, 288 KB

english, 2004

2

Interstitial type defects in ion implanted silicon

N. I. Berezhnov, V. F. Stelmakh, A. R. Chelyadinskii

Journal:

physica status solidi (a)

Year:

1983

Language:

english

File:

PDF, 245 KB

english, 1983

3

Damage Profiles in Ion Implanted Silicon

V. D. Tkachev, G. Hölzer, A. R. Chelyadinskii

Journal:

physica status solidi (a)

Year:

1984

Language:

english

File:

PDF, 185 KB

english, 1984

4

Diffusion of Boron Implanted into Silicon

V. F. Stelmakh, Yu. R. Suprun-Belevich, V. D. Tkachev, A. R. Chelyadinskii

Journal:

physica status solidi (a)

Year:

1985

Language:

english

File:

PDF, 240 KB

english, 1985

5

Effect of Radiation Defects and Elastic Incompatibility Stresses on the Electrical Activation and Diffusion of Boron in Ion-Implanted Silicon

V. F. Stelmakh, Yu. R. Sutrtin-belevich, A. R. Chelyadinskii

Journal:

physica status solidi (a)

Year:

1989

Language:

english

File:

PDF, 236 KB

english, 1989

6

Diffusion of ion-implanted phosphorus in silicon

A. R. Chelyadinskii, H. I. Haki Taher

Journal:

physica status solidi (a)

Year:

1994

Language:

english

File:

PDF, 425 KB

english, 1994

7

Charge States of Interstitial Defects in lmplanted Silicon and Their Annealing Temperatures

M. Jadan, N. I. Berezhnov, A. R. Chelyadinskii

Journal:

physica status solidi (b)

Year:

1995

Language:

english

File:

PDF, 257 KB

english, 1995

8

Spatial distribution, build-up, and annealing of radiation defects in silicon implanted by high-energy krypton and xenon ions

A. R. Chelyadinskii, V. S. Varichenko, A. M. Zaitsev

Journal:

Physics of the Solid State

Year:

1998

Language:

english

File:

PDF, 75 KB

english, 1998

9

Model of the pair phosphorus atom-interstitial silicon atom

A. R. Chelyadinskii, V. A. Burenkov

Journal:

Physics of the Solid State

Year:

1998

Language:

english

File:

PDF, 59 KB

english, 1998

10

Improved multistep method of ion implantation into silicon for IC manufacture

V. I. Plebanovich, A. R. Chelyadinskii, Yu. B. Vasil’ev, A. I. Gladchuk, V. E. Osipov

Journal:

Russian Microelectronics

Year:

2008

Language:

english

File:

PDF, 252 KB

english, 2008

11

Development of dislocation-free ion-doped silicon layers

V. I. Plebanovich, A. I. Belous, A. R. Chelyadinskiĭ, V. B. Odzhaev

Journal:

Physics of the Solid State

Year:

2008

Language:

english

File:

PDF, 340 KB

english, 2008

12

Interstitial type defects in implanted silicon

N. I. Berezhnov, V. F. Stel'makh, A. R. Chelyadinskii

Journal:

Russian Physics Journal

Year:

1984

Language:

english

File:

PDF, 407 KB

english, 1984

13

Charge state of intrinsic interstitial defects and their substitution of boron atoms in the silicon lattice

N. I. Berezhnov, Yu. R. Suprun-Belevich, A. R. Chelyadinskii, Kaki Ismail Haki Taher

Journal:

Russian Physics Journal

Year:

1991

Language:

english

File:

PDF, 363 KB

english, 1991

14

On the problem of Watkins substitution and migration of silicon atoms in silicon

N.I. Berezhnov, A.R. Chelyadinskii, M. Jadan, Yu.R. Suprun-Belevich

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1993

Language:

english

File:

PDF, 559 KB

english, 1993

15

Radiation defects and electrical properties of silicon layers containing Sb and As implanted with Si+ ions

O.J. Araika, A.R. Chelyadinskii, V.A. Dravin, Yu.R. Suprun-Belevich, V.P. Tolstikh

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1993

Language:

english

File:

PDF, 506 KB

english, 1993

16

EPR, XRD and optical reflectivity studies of radiation damage in silicon after high energy implantation of Ni ions

V.S. Varichenko, A.M. Zaitsev, J.K.N. Lindner, R. Domres, N.M. Penina, D.P. Erchak, A.R. Chelyadinskii, V.A. Martinovitsh

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1994

Language:

english

File:

PDF, 630 KB

english, 1994

17

Defect production in silicon irradiated with 5.68 GeV Xe ions

V.S. Varichenko, A.M. Zaitsev, N.M. Kazutchits, A.R. Chelyadinskii, N.M. Penina, V.A. Martinovich, Ya.I. Latushko, W.R. Fahrner

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1996

Language:

english

File:

PDF, 549 KB

english, 1996

18

Influence of radiation defects on diffusion of arsenic and antimony in implanted silicon

M. Jadan, A. R. Chelyadinskii, V. Yu. Yavid

Journal:

Russian Microelectronics

Year:

2012

Language:

english

File:

PDF, 204 KB

english, 2012

19

Getter formation in silicon by implantation of antimony ions

P. K. Sadovskii, A. R. Chelyadinskii, V. B. Odzhaev…

Journal:

Physics of the Solid State

Year:

2013

Language:

english

File:

PDF, 381 KB

english, 2013

20

Localization of carbon atoms and extended defects in silicon implanted separately with C+and B+ions and jointly with C+and B+ions

M. Jadan, A. R. Chelyadinskii, V. B. Odzhaev

Journal:

Physics of the Solid State

Year:

2013

Language:

english

File:

PDF, 319 KB

english, 2013

21

Diffusion of implanted nickel in diamond

Filipp, A.R., Tkachev, V.V., Varichenko, V.S., Zaitsev, A.M., Chelyadinskii, A.R., Kluev, Yu.A.

Journal:

Diamond and Related Materials

Year:

1992

Language:

english

File:

PDF, 463 KB

english, 1992

22

Impurity ion implantation into silicon single crystals: efficiency and radiation damage

Vavilov, V S, Chelyadinskii, Aleksei R

Journal:

Physics Uspekhi

Year:

1995

Language:

english

File:

PDF, 704 KB

english, 1995

23

Defect-impurity engineering in implanted silicon

A. R. Chelyadinskii, F. F. Komarov

Year:

2003

Language:

english

File:

PDF, 1.34 MB

english, 2003

24

Interaction between antimony atoms and micropores in silicon

Odzhaev, V. B., Petlitskii, A. N., Plebanovich, V. I., Sadovskii, P. K., Tarasik, M. I., Chelyadinskii, A. R.

Journal:

Physics of the Solid State

Year:

2018

Language:

english

File:

PDF, 352 KB

english, 2018